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Si7964DP
Vishay Siliconix
Dual N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
60
R DS(on) ( Ω )
0.023 at V GS = 10 V
I D (A)
9.6
Q g (Typ.)
43
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFET
? New Low Thermal Resistance PowerPAK ?
Package
? Dual MOSFET for Space Savings
? 100 % R g Tested
? High Threshold Voltage at High Temperature
PowerPAK SO-8
6.15 mm
1
S1
G1
5.15 mm
D 1
D 2
2
3
S2
G2
4
D1
8
D1
7
6
D2
D2
G 1
G 2
5
Bottom View
Ordering Information: Si7964DP-T1-E3 (Lead (Pb)-free)
Si7964DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S 1
N-Channel MOSFET
S 2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
60
± 20
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
Continuous Source Current (Diode Conduction) a
Single Avalanche Current
Single Avalanche Energy
T A = 25 °C
T A = 70 °C
L = 0.1 mH
I D
I DM
I S
I AS
E AS
9.6
7.7
2.9
40
25
31
6.1
4.9
1.2
A
mJ
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b, c
T A = 25 °C
T A = 70 °C
P D
T J , T stg
3.5
2.2
- 55 to 150
260
1.4
0.9
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
Steady State
R thJA
26
60
35
85
°C/W
Maximum Junction-to-Case (Drain)
Steady State
R thJC
2.2
2.7
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( http://www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73101
S09-0272-Rev. C, 16-Feb-09
www.vishay.com
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